AME078  |  Semiconductor Material with a Buffer Layer for Improved TeraHertz Radiation Use

Molecular Beam Epitaxy growth of InAs on GaSb is plagued by problems such as poor sticking efficiency of InAs onto GaSb, and decomposition of GaSb during oxide removal under an arsenic flux. This technology presents a novel structure for semiconductor elements comprising a substrate, a buffer layer, an epitaxial layer, and a process to achieve good adhesion between components. A buffer layer which is lattice-mismatched with the substrate and the intended epitaxial layer have shown to yield good quality epitaxial layers, resulting in better performance, compared to current epitaxial layers or even bulk materials when used as a terahertz emitter.

Exhibitor : University of The Philippines