AME005  |  Materials for 3D Printing

This technology offer highlights the work done in the area of materials for 3D printing. 3D printing has revolutionised manufacturing industries by offering a series of advantages including: New shapes and structures - Molds and cutting technologies limit formation of complex structure. New business models - On-demand manufacturing reducing the need for molds, inventory stock and storage area. These technologies innovates the materials used for 3D printing, allow for the replacement of traditional materials and enable new functionalities.

Exhibitor : A*STAR - Institute of Materials Research and Engineering

AME059  |  Catalyst for Producing Chiral and Conductive Selective Single-walled Carbon Nanotubes

Structurally uniform and chirality-pure single-walled carbon nanotubes (SWCNTs) are highly desired for both fundamental studies and technological applications. The ultimate goal of producing just one type of SWCNT by controlling its structure or chirality, during growth has proved to be a considerable challenge over the last two decades. Using high melting point tungsten-based intermetallic compound nanocrystals that can maintain their crystalline structures during the SWCNT growth process as catalysts, allows growth of SWCNTs with specific chirality and different conductivities, with purity between 92 – 98%.

Exhibitor : Peking University

SDE102  |  Memristor

The memristor technology developed is based on the use of amorphous strontium titanate (STO) as the switching layer in the device.  This technology can be used in developing application based on non-volatile computer memory. This novel memristor offers a unique platform having the distinct performance advantages of low power consumption, multi-state operation and the absence of the need for an electroforming step in their manufacture.

Exhibitor : RMIT University

AME078  |  Semiconductor Material with a Buffer Layer for Improved TeraHertz Radiation Use

Molecular Beam Epitaxy growth of InAs on GaSb is plagued by problems such as poor sticking efficiency of InAs onto GaSb, and decomposition of GaSb during oxide removal under an arsenic flux. This technology presents a novel structure for semiconductor elements comprising a substrate, a buffer layer, an epitaxial layer, and a process to achieve good adhesion between components. A buffer layer which is lattice-mismatched with the substrate and the intended epitaxial layer have shown to yield good quality epitaxial layers, resulting in better performance, compared to current epitaxial layers or even bulk materials when used as a terahertz emitter.

Exhibitor : University of The Philippines