Carbon nanotube (CNT) complementary metal-oxide-semiconductor (CMOS) field effect transistor (FET) with reduced fabrication processes and extreme scaling-down performance. Since single-walled carbon nanotube (SWCNT) was first reported by Prof. Iijima at 1991, CNT has proven to have outstanding mechanical and electrical attributes, advantages, and associated applications. By applying doping-free FET structure, the total processes are reduced by about 50% compared to tradition silicon (Si)-based CMOS technique. CNT CMOS FET exhibits extreme scaling-down behavior even with 5 nm gate-length (the same gate length with 1 nm tech-node of IRDS). By comparing CNT CMOS FET to Intel Si CMOS FET, CNT has proven to have 10 times performance advantage, in both frequency and energy consumption, and such advantages continue with scaling-down to sub-10 nm.
Technology Features, Specifications and Advantages
Compared to Si CMOS FET:
· CNT CMOS FET have outstanding mechanical and electrical attributes and advantages, such as ballistic transport and high current density
· CNT CMOS FET structures are doping-free, n-FET and p-FET can be achieved using different contact metals
· CNT CMOS FET exhibits extreme scaling-down behaviour, even with 5 nm gate-length, due to the intrinsic structure of CNT
· CNT CMOS FET has higher switching speed and better energy consumption performance
Carbon Nanotube (CNT) CMOS FET has the potential to overcome the scaling limitations of Si CMOS FET, and hence, can become the next building blocks of future nanoelectronics. The potential applications of CNT CMOS FET include uses in analog and digital electronics design, such as transistors, gates and memory components.